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Sensitron GaN Module Features: • More efficient than Si MOSFET based Modules
• Low RDSon
• Integrated gate drive• Fast ton and toff times (10X more than Si) • Low inductance package design can take maximum advantage of high switching speeds • PWM frequencies up to 1Mhz • Smaller input and output filters • Topside cooling results in optimal thermal performance • Connect with our design team for a sample today! |
| GaN Half Bridge IPM, SPG025N035P1B | GaN Full Bridge IPM, SPG025N020P2A |
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• 350V rated 20A • 500Khz switching • Integrated gate drive • Top side cooling for optimal thermal performance |
• 200V rated 25A • High speed switching to 1Mhz • Integrated gate drive • Top side cooling to PCB • Thermal interface through solder castellations • 200V, rated 50A (In development) |
