Sensitron GaN Module Features: • More efficient than Si MOSFET based Modules
• Low RDSon
• Integrated gate drive• Fast ton and toff times (10X more than Si) • Low inductance package design can take maximum advantage of high switching speeds • PWM frequencies up to 1Mhz • Smaller input and output filters • Topside cooling results in optimal thermal performance • Connect with our design team for a sample today! |