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SiC MOSFETs

SiC Schottky MOSFETs
  • SiC Schottky MOSFETs: Up to 2500 V
  • No recovery time or reverse recovery losses
  • Mil/Space level screening options availableSurface mount packages- diopak, LCC, etc
  • Thru hole in TO-25x packages

Part Number Polarity Config VBRDSS, Min ID Max, Tc= 25C (A) VGS(th), Max VGS, Max (V) TJ Min, Op & Stor (°C) TJ Min, Op & Stor (°C) PD, Max (W) RDS(on) Max @ ID Rth(j-c) (°C/W) VSD, Typ (V) Package Action
SHD619532 Nch FET 1200 23 ? -10 to 25 -55 150 150 0.11 @ 20 1 3.3V SMD-1 Request Quote
SHD626532 Nch FET 1200 20 ? -10 to 25 -55 150 120 0.11 @ 20 1.25 3.3V TO-257 Request Quote
SHDC625812 Nch FET 1200 31 4 -6 to 22 -55 150 150 0.125 @ 10 0.83 4.6V TO-254 Request Quote
SHDC625822 Nch+Dio FET 1200 31 4 -6 to 22 -55 150 150 0.125 @ 10 0.83 1.3V TO-254 Request Quote
SHDC626812 Nch FET 1200 22 4 -6 to 22 -55 150 75 0.125 @ 10 1.67 4.6V TO-257 Request Quote
SHDC626822 Nch+Dio FET 1200 22 4 -6 to 22 -55 150 75 0.125 @ 10 1.67 1.3V TO-257 Request Quote