Part Number : SHD626532

HERMETIC SILICON CARBIDE FET

DESCRIPTION: A 1200, Min VOLT, 20 AMP POWER SILICON CARBIDE Nch FET IN AN ISOLATED HERMETIC TO-257 PACKAGE, AVAILABLE SCREENED TO ANY REQUIRED LEVEL.


Features :
  • Fast switching and reverse recovery
  • Ceramic seals

MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25°C UNLESS OTHERWISE SPECIFIED.
RATING SYMBOL MAX UNITS
DRAIN-SOURCE VOLTAGE VDSS 1200 V
CONTINUOUS DRAIN CURRENT VGS 20 A
PULSED DRAIN CURRENT (t ≤ 10μs, dc ≤ 1%) ID pulse 80 A
GATE - SOURCE VOLTAGE VGSS ? V
MAXIMUM POWER DISSIPATION, TC = 25°C Pd 120 W
MAXIMUM THERMAL RESISTANCE RθJC 1.25 °C/W
MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE Top, Tstg -55 to 150 °C

ELECTRICAL CHARACTERISTICS
CHARACTERISTIC MIN TYP MAX UNITS
GATE THRESHOLD VOLTAGE (VDS = VGS) -10 to 25 V
STATIC DRAIN – SOURCE ON - STATE RESISTANCE (@ ID(A)) 0.11 @ 20
FORWARD VOLTAGE 3.3V V



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Mechanical Dimensions: In Inches / mm



Datasheets

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